Band gap engineering of graphene through quantum confinement and edge distortions

Please use this identifier to cite or link to this item: http://dspace.utpl.edu.ec/jspui/handle/123456789/18812

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DC Field	Value	Language
dc.contributor.author	Stashans, A.	es_ES
dc.contributor.author	Gomez, C.	es_ES
dc.contributor.author	Villamagua Conza, L.	es_ES
dc.contributor.author	Carini, M.	es_ES
dc.date.accessioned	2017-06-16T22:02:25Z	-
dc.date.available	2017-06-16T22:02:25Z	-
dc.date.issued	2016-05-06	es_ES
dc.identifier	10.1007/s11587-016-0278-8	es_ES
dc.identifier.isbn	355038	es_ES
dc.identifier.other	10.1007/s11587-016-0278-8	es_ES
dc.identifier.uri	http://dspace.utpl.edu.ec/handle/123456789/18812	-
dc.description.abstract	Based on the density functional theory approach we explore the chances endured by energy gap (EG) of semiconducting (armchair) graphene nanoribbons (AGNRs) when Stone-Wales (SW) defects are placed inside their lattices. Our results show that the AGNRs, which belong to the (Formula presented.) family experience an increase in their EG value. On the other hand, those belonging to 3m and (Formula presented.) families experience decrease in their EG. The maximum observed EG for pristine and distorted ribbons were (Formula presented.)2.6 and (Formula presented.)1.6 eV, respectively. Our results can be useful to understand the semiconducting properties of wider graphene nanoribbons which are already available experimentally.	es_ES
dc.language	Inglés	es_ES
dc.subject	Density functional theory	es_ES
dc.title	Band gap engineering of graphene through quantum confinement and edge distortions	es_ES
dc.type	Article	es_ES
dc.publisher	Ricerche di Matematica	es_ES
Appears in Collections:	Artículos de revistas Científicas

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