Please use this identifier to cite or link to this item: http://dspace.utpl.edu.ec/jspui/handle/123456789/19187
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dc.contributor.authorRivera Escobar, R.es_ES
dc.contributor.authorStashans, A.es_ES
dc.date.accessioned2017-06-16T22:03:06Z-
dc.date.available2013-03-13es_ES
dc.date.available2017-06-16T22:03:06Z-
dc.date.submitted13/03/2013es_ES
dc.identifier.isbn20780958es_ES
dc.identifier.issn978-988192526-8es_ES
dc.identifier.urihttp://dspace.utpl.edu.ec/handle/123456789/19187-
dc.description.abstractTiO2 crystals, anatase and rutile, have been studied using Density Functional Theory (DFT) and the Generalized Gradient Approximation (GGA). Also, the intraatomic interaction term for strongly correlated d-electrons (DFT+U approximation) has been utilized for a proper description of the Ti d-electrons. The presence of some impurities in the otherwise pure crystal affects the structural, electronic and magnetic properties of the TiO2. The presence of a Fe atom in the anatase structure produces shifts of the Ti atoms towards it whereas the majority of O atoms move away. Also, it exhibits n-type electrical conductivity. When a Sc atom is present in the same structure, Ti atoms are not moving while the O atoms move outwards with respect to the impurity. There are no changes in the electrical conductivity. In the case of Fe atom incorporation into the rutile structure, the host Ti atoms move towards the point defect and O atoms move outwards, obviously due to the electrostatic forces. The bandgap reduction has been observed for this particular case. Finally, the presence of a Sc atom in the rutile crystalline lattice produces a local microstructure with all defectsurrounding atoms displacing themselves outwards the defect, most due to the reduction of the charge in the defective region. A small band-gap reduction (14%) has been also found in this case.es_ES
dc.languageIngléses_ES
dc.subjectanatase structureses_ES
dc.subjectband gap reductiones_ES
dc.subjectcrystalline latticees_ES
dc.subjectelectrical conductivityes_ES
dc.subjectelectronic and magnetic propertieses_ES
dc.subjectgeneralized gradient approximationses_ES
dc.subjectimpurity dopinges_ES
dc.subjecttioes_ES
dc.titleDefects in TiO2 crystalses_ES
dc.typeArticlees_ES
dc.publisherLecture Notes in Engineering and Computer Sciencees_ES
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